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Both Axes— Base Voltage, 6 steps from 0.

2NJANTX Motorola | Bipolar NPN RF transistor, TO | Buy on-line |

For full electrical specifications write: Long Island City 6, N. It is claimed that the mod- el substantially increases transistor performance by optimiz- ing the effect of heat transfer coefficient available in free convec- tion.

Key to the letter codes is: Finally, it must be cautioned that the char- acteristics listed are primarily a guide and generally cannot be used for direct compari- son of types.

Channeling is a condition whereby the surface portion of a transistor col- lector region actually changes polarity and becomes an extension of the base region. The semiconductor chip is bonded to a molybdenum sub- strate; junctions and surfaces are protected by a passivated surface of silicon oxide.

HL26 2N P58 Logic levels are 0 and 6 v dc. Microminiature devices for high density circuit applications. You can have this kind of reliability in your military and commercial applications. Higher volt- age units offer substantial savings; over small devices used “in series”. Rated mW free air minimummW mounted in circuit boards, to 1 watt infinite heat sink. Noise lev- els as low as 0.


2n datasheet pdf

This phenomenon circumvents the pas- sivation advantages of planar designs and results in excessive leakage cur- rents. General Electric transistors exceed Minwteman Specifications include an NF of 4. You can select either common-emitter or com- mon-base configurations. Motorola developed Annular process datsheet take its place among the major milestones in the advancement of the semicon- ductor art. Units can switch 25 amps at collector-emitter voltages of 40, 60 and 80 v. And, if theoretical analysis of this process is confirmed by tests now in progress, they will prove to be more resistant to radiation, thus heralding improved performance and greater re- liability of space equipment.

Extremely low leakage as low as InA max. For instance, final- phase testing of 4, G. Makes possible com- bined high voltage and true silicon oxide passivation. In view of these considerations, there 2n9114 little doubt that the new. The device is packaged in a four-lead TO case. Gibson Electronics Marketing Co Lakewood: Over-all sock- et height is 0. AJ ,si pnp,AJ,ge pnp. The applica- tion literature listing has been repeated on the back of this card for your convenience.

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BoxScottsdale, Arizona. Type ab me MAX.

For more details on any of these prod- ucts contact your nearest Hughes rep- resentative. Hard backs with ex- tremely low noise and dynamic imped- ance. Rf amplifier gain is 15 db, typical.


Total function logic Connection oriented packaging Connection oriented batch manufacturing See how these unique features will benefit you. A3, for example, means the type can be found in the third block of the Audio section. Feature high breakdown voltages, exceptionally low leakage currents, typically 20 nanoamps, meas- ured at stringent bias conditions. South Minneapolis 8, Minn. P23 2N HF71, P This also permits quick identification of close sub- stitutes. Types are listed in order of increasing value of key parameter.

Silicon Computer Diodes Diffused planar passivated. The Reader-Service numbers for the prod- ucts can be circled on either the Reader -Service card in the main section or the special one in the back of this Data Chart.

2N914 Datasheet PDF – Motorola

FET’s provide circuit simplicity, tiny size. Accelerated by high temperatures, this reaction increases se- ries resistance and weakens the leads — bad news when reliability is essential. Write Indus- trial Relations Director.

Junction capacitance at BVR: Sales and service offices in all principal cities of the world. At 25 C, either collector-to-base voltage is 25 v.