BS170 FET DATASHEET FILE TYPE PDF

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BS N-channel Enhancement Mode Field Effect Transistor. Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS. BS Transistor Datasheet, BS Equivalent, PDF Data Sheets. Type Designator: BS MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BS/D TMOS FET Switching N Channel Enhancement BS October rev 2 16 stbn75f3 stpn75f3 stwn75f3 nchannel 75v 3. Please see the information tables in this datasheet for details. Power mosfet.

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Bs mmbf nchannel enhancement mode field effect transistor fairchild semiconductor corporation. Source drain diode symbol parameter test conditions min. Nothing in this Agreement shall be b170 as creating a joint venture, agency, partnership, trust or other similar association of any kind between the parties hereto. This Agreement, including the Exhibits attached hereto, constitutes the entire agreement and understanding between the parties hereto regarding the daasheet matter hereof and supersedes all other agreements, understandings, promises, representations or discussions, written or oral, between fule parties fils the subject matter hereof.

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This datasheet provides information about parts that are rohscompliant and or parts that are nonrohscompliant. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. Rochester Contact Sales Office. Nchannel mosfet g d s toab g d s available available ordering information information package toab lead pb.

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BS Single N-Channel Small Signal MOSFET 60V, mA, 5Ω

Datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. Aodaoi pchannel enhancement mode field effect. Failure by either party hereto to enforce any term of this Agreement shall not be held a waiver of such term nor prevent enforcement of such term thereafter, unless and to the extent expressly set forth in a writing signed by the party charged with such waiver.

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Normalized effective transient thermal impedance, junctiontoambient toaa, bs only normalized effective transient thermal impedance t 1 square wave pulse duration sec. Please see the information tables in this datasheet for details. All reports, documents, materials and other information collected or prepared during an audit shall be deemed to be bs710 confidential information of Licensee “Licensee Confidential Information”and ON Semiconductor shall protect the confidentiality of all Licensee Confidential Information; provided that, such Licensee Confidential Information shall not be disclosed to any third parties with the sole exception of the independent third party auditor approved by Licensee in writing, and its permitted use shall be restricted to the purposes of the audit rights described in this Section Licensee agrees that it shall maintain accurate and complete datzsheet relating to its tyep under Section 2.

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Bs170 fet datasheet filetype pdf

Power mosfet features dynamic dvdt det repetitive avalanche rated. Parameter symbol 2n 2n vqj vqp vqjp bs unit drainsource voltage v ds 60 60 filf 60 60 gatesource voltage nonrepetitive v. ON Semiconductor shall have the right to terminate this Agreement upon written notice to Licensee if: Neither this Agreement, nor any of the rights or obligations herein, may be assigned or transferred by Licensee without the express prior written consent of ON Semiconductor, and any attempt to do so in violation of the foregoing shall be null and void.

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BS170: Single N-Channel Small Signal MOSFET 60V, 500mA, 5Ω

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